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See Technical Specifications

MT28EW128ABA1HJS-0SIT +BOM

NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 75ns 56-Pin TSOP T/R/Tray

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

MT28EW128ABA1HJS-0SIT
Datasheet:

MT28EW128ABA1HJS-0SIT Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Models:

Request Free CAD Models for MT28EW128ABA1HJS-0SIT

MT28EW128ABA1HJS-0SIT General Description

Whether you're working on consumer electronics, industrial automation, or telecommunications projects, the MT28EW128ABA1HJS-0SIT is a reliable and efficient flash memory solution that can meet your storage needs. Its robust design, high-speed performance, and wide operating temperature range make it a versatile choice for various applications. Upgrade your storage capabilities with the MT28EW128ABA1HJS-0SIT and experience reliable data storage and retrieval in demanding environments

Key Features

Seven erase blocks:16KB/8K-word boot block (protected)Two 8KB/4K-word parameter blocksFour main memory blocks Smart 5 technology (B5):5V ±10% VCC5V ±10% VPP application/production programming1 Advanced 0.18µm CMOS floating-gate process Compatible with 0.3µm Smart 5 device Address access time: 80ns 100,000 ERASE cycles Industry-standard pinouts Inputs and outputs are fully TTL-compatible Automated write and erase algorithm Two-cycle WRITE/ERASE sequence Byte- or word-wide READ and WRITE (MT28F400B5, 256K x 16/512K x 8) Byte-wide READ and WRITE only (MT28F004B5, 512K x 8) TSOP and SOP packaging options

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	128Mbit	Memory Organization	16M x 8, 8M x 16
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	60ns	Access Time	95 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount