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MT28EW128ABA1LJS-0SIT +BOM

FLASH - NOR Memory IC 128Mbit Parallel 95 ns 56-TSOP

MT28EW128ABA1LJS-0SIT General Description

The MT28EW128ABA1LJS-0SIT, a product of Micron Technology, is a state-of-the-art 128-gigabit (16 gigabyte) NAND Flash memory chip featuring 3D NAND technology for increased storage density. With an operating voltage of 1.8 volts, this chip offers exceptional energy efficiency and incorporates a Serial Peripheral Interface (SPI) for effortless integration into a range of devices such as smartphones, tablets, and solid-state drives (SSDs). Its high-speed data transfer capabilities enable swift read and write operations, complemented by advanced error correction techniques that ensure data integrity and reliability. This NAND flash chip is designed to meet the non-volatile memory storage needs of consumer electronics, automotive, industrial, and enterprise systems, and its compact form factor and low power consumption make it well-suited for battery-powered devices and space-constrained environments

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Factory Lead Time 53 Weeks, 1 Day Date Of Intro 2016-04-22
Access Time-Max 70 ns Alternate Memory Width 8
JESD-30 Code R-PDSO-G56 JESD-609 Code e3
Length 18.4 mm Memory Density 134217728 bit
Memory IC Type FLASH Memory Width 16
Number of Functions 1 Number of Terminals 56
Number of Words 8388608 words Number of Words Code 8000000
Operating Mode ASYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C Organization 8MX16
Parallel/Serial PARALLEL Peak Reflow Temperature (Cel) 260
Programming Voltage 3 V Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V Surface Mount YES
Technology CMOS Temperature Grade INDUSTRIAL
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Pitch 0.5 mm Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Type NOR TYPE
Width 14 mm

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