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MT28EW512ABA1LJS-0SIT +BOM

High-capacity Flash Storage Solution for Modern Device

MT28EW512ABA1LJS-0SIT General Description

FLASH - NOR Memory IC 512Mbit Parallel 95 ns 56-TSOP

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Factory Lead Time 53 Weeks, 1 Day Access Time-Max 95 ns
Alternate Memory Width 8 JESD-30 Code R-PDSO-G56
Length 18.4 mm Memory Density 536870912 bit
Memory IC Type FLASH Memory Width 16
Number of Functions 1 Number of Terminals 56
Number of Words 33554432 words Number of Words Code 32000000
Operating Mode ASYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C Organization 32MX16
Parallel/Serial PARALLEL Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 3 V Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V Surface Mount YES
Technology CMOS Temperature Grade INDUSTRIAL
Terminal Form GULL WING Terminal Pitch 0.5 mm
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Type NOR TYPE Width 14 mm
Programmabe Not Verified Memory Type Non-Volatile
Memory Format FLASH Memory Size 512Mbit
Memory Organization 64M x 8, 32M x 16 Memory Interface Parallel
Write Cycle Time - Word, Page 60ns Access Time 95 ns
Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount Base Product Number MT28EW512

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