This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

MT29F16G08CBACAWP:C +BOM

Advanced features for optimized performance: With its impressive specifications

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

MT29F16G08CBACAWP:C
Datasheet:

MT29F16G08CBACAWP:C Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
EDA/CAD Models:

Request Free CAD Models for MT29F16G08CBACAWP:C

MT29F16G08CBACAWP:C General Description

The MT29F16G08CBACAWP:C is a NAND flash memory chip designed to meet the high-demand requirements of various electronic devices. With a substantial capacity of 16 gigabytes, this chip provides ample storage for solid-state drives, tablets, smartphones, and industrial devices. Its MLC (Multi-Level Cell) NAND flash category, indicated by the "CB" in the part number, ensures efficient data storage and retrieval. The integration of Toggle DDR interface, denoted by "ACA," enables faster data transfer rates, making it ideal for applications where quick access to large volumes of data is essential. Additionally, the chip's support for hardware write protection, signified by "WP," enhances data security, a crucial feature for safeguarding sensitive information. Its operation within a supply voltage range of 2.7V to 3.6V makes it compatible with a variety of electronic systems. Furthermore, the chip employs advanced error correction techniques to ensure data reliability, a critical aspect for maintaining the integrity of stored information

Key Features

Open NAND Flash Interface (ONFI) 1.0-compliant1
Single-level cell (SLC) technology
Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks
Asynchronous I/O performance
– tRC/tWC: 20ns (3.3V), 25ns (1.8V)
Array performance
– Read page: 25µs 3
– Program page: 200µs (TYP: 1.8V, 3.3V)3
– Erase block: 700µs (TYP)
Command set: ONFI NAND Flash Protocol
Advanced command set
– Program page cache mode4
– Read page cache mode 4
– One-time programmable (OTP) mode
– Two-plane commands 4
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
Operation status byte provides software method for detecting
– Operation completion
– Pass/fail condition
– Write-protect status
Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
WP# signal: Write protect entire device
First block (block address 00h) is valid when ship ped from factory with ECC. For minimum required ECC, see Error Management.
Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
RESET (FFh) required as first command after power-on
Alternate method of device initialization (Nand_In it) after power up (contact factory)
Internal data move operations supported within the plane from which data is read
Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
Operating voltage range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA

Specifications

Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Memory IC Type	FLASH	Programming Voltage	3.3 V
Type	SLC NAND TYPE