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See Technical Specifications

MT29F1G08AACWP +BOM

Manufacturer:

MICRON
Mfr.Part #:

MT29F1G08AACWP
Datasheet:

MT29F1G08AACWP Datasheet (PDF)
ECCN (US):

3A991.b.1.a
Automotive:

No
PPAP:

No
Cell Type:

SLC NAND
EDA/CAD Models:

Request Free CAD Models for MT29F1G08AACWP

Key Features

Open NAND Flash Interface (ONFI) 1.0-compliant1

Single-level cell (SLC) technology

Organization

Page size x8: 2112 bytes (2048 + 64 bytes)

Page size x16: 1056 words (1024 + 32 words)

Block size: 64 pages (128K + 4K bytes)

Plane size: 2 planes x 2048 blocks per plane

Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks

Asynchronous I/O performance

tRC/tWC: 20ns (3.3V), 25ns (1.8V)

Array performance

Read page: 25s 3

Program page: 200s (TYP: 1.8V, 3.3V)3

Erase block: 700s (TYP)

Command set: ONFI NAND Flash Protocol

Advanced command set

Program page cache mode4

Read page cache mode 4

One-time programmable (OTP) mode

Two-plane commands 4

Interleaved die (LUN) operations

Read unique ID

Block lock (1.8V only)

Internal data move

Operation status byte provides software method for detecting

Operation completion

Pass/fail condition

Write-protect status

Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion

WP# signal: Write protect entire device

First block (block address 00h) is valid when ship ped from factory with ECC. For minimum required ECC, see Error Management.

Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000

RESET (FFh) required as first command after power-on

Alternate method of device initialization (Nand_In it) after power up (contact factory)

Internal data move operations supported within the plane from which data is read

Quality and reliability

Data retention: 10 years

Endurance: 100,000 PROGRAM/ERASE cycles

Operating voltage range

VCC: 2.73.6V

VCC: 1.71.95V

Operating temperature:

Commercial: 0C to +70C

Industrial (IT): 40C to +85C

Package

48-pin TSOP type 1, CPL2

63-ball VFBGA

Specifications

ECCN (US)	3A991.b.1.a	Part Status	Obsolete
Automotive	No	PPAP	No
Cell Type	SLC NAND	Chip Density (bit)	1G
Architecture	Sectored	Boot Block	No
Block Organization	Symmetrical	Address Bus Width (bit)	28
Sector Size	128Kbyte x 1024	Page Size	2Kbyte
Number of Bits/Word (bit)	8	Number of Words	128M
Programmability	Yes	Timing Type	Synchronous
Max. Access Time (ns)	25	Maximum Erase Time (s)	0.002/Block
Maximum Programming Time (ms)	700000/Page	Interface Type	Serial
Minimum Operating Supply Voltage (V)	2.7	Typical Operating Supply Voltage (V)	3.3
Maximum Operating Supply Voltage (V)	3.6	Operating Current (mA)	35
Program Current (mA)	35	Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	70	Supplier Temperature Grade	Commercial
Command Compatible	No	ECC Support	Yes
Support of Page Mode	Yes	Packaging	Tray
Mounting	Surface Mount	PCB changed	48
Pin Count	48	Lead Shape	Gull-wing