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MT29F1G16ABBDAHC-IT:D +BOM
NAND Flash, SLC NAND Flash, 1Gb, 1.8V, 63-ball VFBGA, RoHS
63-VFBGA (10.5x13)-
Manufacturer:
Micron Technology Inc.
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Mfr.Part #:
MT29F1G16ABBDAHC-IT:D
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Datasheet:
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Programmabe:
Not Verified
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Memory Type:
Non-Volatile
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Memory Format:
FLASH
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Technology:
FLASH - NAND
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EDA/CAD Models:
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Availability: 5354 PCS
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MT29F1G16ABBDAHC-IT:D General Description
This cutting-edge device is designed to withstand the demands of modern applications, supporting up to 3,000 program/erase cycles - more than enough to keep up with even the most data-intensive tasks. Whether it's powering consumer electronics, networking equipment, or industrial devices, this NAND Flash memory device is well-equipped to handle the job
Key Features
- Open NAND Flash Interface (ONFI) 1.0-compliant1
- Single-level cell (SLC) technology
- Organization
- – Page size x8: 2112 bytes (2048 + 64 bytes)
- – Page size x16: 1056 words (1024 + 32 words)
- – Block size: 64 pages (128K + 4K bytes)
- – Plane size: 2 planes x 2048 blocks per plane
- – Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks
- Asynchronous I/O performance
- – tRC/tWC: 20ns (3.3V), 25ns (1.8V)
- Array performance
- – Read page: 25µs 3
- – Program page: 200µs (TYP: 1.8V, 3.3V)3
- – Erase block: 700µs (TYP)
- Command set: ONFI NAND Flash Protocol
- Advanced command set
- – Program page cache mode4
- – Read page cache mode 4
- – One-time programmable (OTP) mode
- – Two-plane commands 4
- – Interleaved die (LUN) operations
- – Read unique ID
- – Block lock (1.8V only)
- – Internal data move
- Operation status byte provides software method for detecting
- – Operation completion
- – Pass/fail condition
- – Write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- WP# signal: Write protect entire device
- First block (block address 00h) is valid when ship ped from factory with ECC. For minimum required ECC, see Error Management.
- Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
- RESET (FFh) required as first command after power-on
- Alternate method of device initialization (Nand_In it) after power up (contact factory)
- Internal data move operations supported within the plane from which data is read
- Quality and reliability
- – Data retention: 10 years
- – Endurance: 100,000 PROGRAM/ERASE cycles
- Operating voltage range
- – VCC: 2.7–3.6V
- – VCC: 1.7–1.95V
- Operating temperature:
- – Commercial: 0°C to +70°C
- – Industrial (IT): –40ºC to +85ºC
- Package
- – 48-pin TSOP type 1, CPL2
- – 63-ball VFBGA
Specifications
Programmabe | Not Verified | Memory Type | Non-Volatile |
Memory Format | FLASH | Technology | FLASH - NAND |
Memory Size | 1Gbit | Memory Organization | 64M x 16 |
Memory Interface | Parallel | Clock Frequency | - |
Write Cycle Time - Word, Page | - | Access Time | - |
Voltage - Supply | 1.7V ~ 1.95V | Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Service Policies and Others
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In Stock: 5,354
Minimum Order: 1
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The prices below are for reference only.