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See Technical Specifications

MT29F256G08CJABBWP-12IT:B +BOM

Level Cell NAND Flash

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

MT29F256G08CJABBWP-12IT:B
Datasheet:

MT29F256G08CJABBWP-12IT:B Datasheet (PDF)
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
Memory IC Type:

FLASH
EDA/CAD Models:

Request Free CAD Models for MT29F256G08CJABBWP-12IT:B

MT29F256G08CJABBWP-12IT:B General Description

Featuring MLC technology, the MT29F256G08CJABBWP-12IT:B strikes the perfect balance between performance and affordability. Its multi-level cell array ensures reliable data retention and endurance, making it ideal for applications that require consistent read and write operations. With built-in error correction and wear-leveling mechanisms, you can trust that your data will remain secure and accessible. Whether you're a casual user or a tech enthusiast, this NAND flash memory device is a reliable choice for all your storage needs

Key Features

Open NAND Flash Interface (ONFI) 2.2-compliant1
Multiple-level cell (MLC) technology
Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
Asynchronous I/O performance
– Up to asynchronous timing mode 5
tRC/tWC: 20ns (MIN)
Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
RESET (FFh) required as first command after power
Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
Copyback operations supported within the plane
from which data is read
Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

Specifications

Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8542.32.00.51
Memory IC Type	FLASH	Programming Voltage	3.3 V
Type	MLC NAND TYPE	Programmabe	Not Verified
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NAND (MLC)	Memory Size	256Gbit
Memory Organization	32G x 8	Memory Interface	Parallel
Clock Frequency	83 MHz	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	MT29F256G08