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MT29F2G08ABAEAH4-IT:E TR +BOM

Compact and powerful, this bit NAND flash memory is a great addition to any project requiring reliable storag

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

MT29F2G08ABAEAH4-IT:E TR
Datasheet:

MT29F2G08ABAEAH4-IT:E TR Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Models:

Request Free CAD Models for MT29F2G08ABAEAH4-IT:E TR

MT29F2G08ABAEAH4-IT:E TR General Description

The MT29F2G08ABAEAH4-IT:E TR from Micron Technology is a NAND flash memory component that offers a remarkable 2GB storage capacity and operates at a supply voltage of 3.3V. This memory chip is organized into 4,096 blocks, each containing 64 pages and supports both asynchronous and synchronous read operations, allowing for flexible data retrieval. Designed for high-performance applications, the MT29F2G08ABAEAH4-IT:E TR boasts fast program and erase times, as well as low power consumption, making it an ideal choice for devices such as smartphones, tablets, digital cameras, and solid-state drives. Additionally, this NAND flash memory chip features built-in error correction and wear-leveling mechanisms to ensure data integrity and longevity. With its compact 48-pin TSOP package, the MT29F2G08ABAEAH4-IT:E TR is easy to integrate into space-constrained designs, making it a versatile and reliable solution for data storage needs in various electronic devices

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	2Gbit	Memory Organization	256M x 8
Memory Interface	Parallel	Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	MT29F2G08