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See Technical Specifications

MT29F2G08ABAEAWP-IT +BOM

256M x 8 configuration

Manufacturer:

Micron Technology
Mfr.Part #:

MT29F2G08ABAEAWP-IT
Datasheet:

MT29F2G08ABAEAWP-IT Datasheet (PDF)
ECCN (US):

3A991.b.1.a
Automotive:

No
PPAP:

No
Cell Type:

SLC NAND
EDA/CAD Models:

Request Free CAD Models for MT29F2G08ABAEAWP-IT

Key Features

Open NAND Flash Interface (ONFI) 2.2-compliant1
Multiple-level cell (MLC) technology
Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
Asynchronous I/O performance
– Up to asynchronous timing mode 5
tRC/tWC: 20ns (MIN)
Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
RESET (FFh) required as first command after power
Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
Copyback operations supported within the plane
from which data is read
Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

Specifications

ECCN (US)	3A991.b.1.a	Part Status	Active
Automotive	No	PPAP	No
Cell Type	SLC NAND	Chip Density (bit)	2G
Architecture	Sectored	Boot Block	Yes
Block Organization	Symmetrical	Address Bus Width (bit)	29
Sector Size	128Kbyte x 2048	Page Size	2Kbyte
Number of Bits/Word (bit)	8	Number of Words	256M
Programmability	Yes	Timing Type	Asynchronous
Maximum Erase Time (s)	0.003/Block	Maximum Programming Time (ms)	0.6/Page
Process Technology	CMOS	Interface Type	Parallel
Minimum Operating Supply Voltage (V)	2.7	Typical Operating Supply Voltage (V)	3.3
Maximum Operating Supply Voltage (V)	3.6	Operating Current (mA)	35
Program Current (mA)	35	Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	85	Supplier Temperature Grade	Industrial
Command Compatible	No	ECC Support	Yes
Support of Page Mode	Yes	Minimum Endurance (Cycles)	100000
Packaging	Tray	Mounting	Surface Mount
PCB changed	48	Pin Count	48
Lead Shape	Gull-wing