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MT29F2G08ABBEAHC:E +BOM

Voltage: 1.8V operation

MT29F2G08ABBEAHC:E General Description

Utilizing asynchronous random page read operations, the MT29F2G08ABBEAHC:E chip ensures efficient data access while maintaining data integrity through built-in ECC algorithms. With a maximum program/erase cycle endurance of 100,000 cycles, users can depend on this chip for consistent, long-lasting performance. Its fast read speed of up to 50ns and quick program/erase time of less than 2ms make it ideal for applications requiring rapid data processing

Key Features

  • This chip is designed for use in industrial and automotive applications where high reliability is required
  • The MT29F2G08ABBEAHC:E has enhanced error correction to prevent data corruption
  • It uses wear leveling to prevent excessive write operations that can lead to data loss

Application

  • Powerful storage solution
  • Reliable data retention
  • High-speed performance

Specifications

Product Category NAND Flash Series MT29F
Memory Size 2 Gbit Organization 256 M x 8
Product NAND Flash Product Type NAND Flash
Factory Pack Quantity 1140 Subcategory Memory & Data Storage

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In Stock: 7,072

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