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MT29F2G08ABBEAHC-IT:E 63-VFBGA (10.5x13)

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See Technical Specifications

MT29F2G08ABBEAHC-IT:E +BOM

Flash memory with a capacity of 256 megabits organized in an 8-bit configuration with a fast access time of 25 nanoseconds

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

MT29F2G08ABBEAHC-IT:E
Datasheet:

MT29F2G08ABBEAHC-IT:E Datasheet (PDF)
Programmabe:

Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Models:

Request Free CAD Models for MT29F2G08ABBEAHC-IT:E

MT29F2G08ABBEAHC-IT:E General Description

In terms of reliability, the MT29F2G08ABBEAHC-IT:E is equipped with built-in error correction and wear-leveling algorithms, ensuring data integrity and longevity. It also offers support for features like bad block management, data protection, and secure erase functions, providing enhanced security and peace of mind for users who prioritize the safety of their data

Key Features

Open NAND Flash Interface (ONFI) 2.2-compliant1
Multiple-level cell (MLC) technology
Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
Asynchronous I/O performance
– Up to asynchronous timing mode 5
tRC/tWC: 20ns (MIN)
Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
RESET (FFh) required as first command after power
Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
Copyback operations supported within the plane
from which data is read
Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

Specifications

Programmabe	Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	2Gbit	Memory Organization	256M x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	-	Access Time	-
Voltage - Supply	1.7V ~ 1.95V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount