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MT29F32G08AFABAWP:B +BOM

A high-density M62B NAND flash memory chip with 4GX8 configuration

MT29F32G08AFABAWP:B General Description

In conclusion, the MT29F32G08AFABAWP:B from Micron Technology offers a high-capacity, high-performance solution for non-volatile storage needs. Its feature-rich design, combined with its durability and efficiency, makes it an excellent choice for a wide range of mobile and consumer electronic devices

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 48 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Access Time-Max 20 ns Command User Interface YES
Data Polling NO JESD-30 Code R-PDSO-G48
JESD-609 Code e3 Length 18.4 mm
Memory Density 34359738368 bit Memory IC Type FLASH
Memory Width 8 Number of Functions 1
Number of Sectors/Size 8K Number of Terminals 48
Number of Words 4294967296 words Number of Words Code 4000000000
Operating Mode ASYNCHRONOUS Operating Temperature-Max 70 °C
Operating Temperature-Min Organization 4GX8
Page Size 4K words Parallel/Serial PARALLEL
Programming Voltage 2.7 V Qualification Status Not Qualified
Ready/Busy YES Seated Height-Max 1.2 mm
Sector Size 512K Supply Current-Max 0.05 mA
Supply Voltage-Max (Vsup) 3.6 V Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V Surface Mount YES
Technology CMOS Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Pitch 0.5 mm Terminal Position DUAL
Toggle Bit NO Type SLC NAND TYPE
Width 12 mm

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