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See Technical Specifications

MT29F8G08ABABAWP-IT:B TR +BOM

8G NAND Flash SLC TSOP

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

MT29F8G08ABABAWP-IT:B TR
Datasheet:

MT29F8G08ABABAWP-IT:B TR Datasheet (PDF)
Programmabe:

Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Models:

Request Free CAD Models for MT29F8G08ABABAWP-IT:B TR

MT29F8G08ABABAWP-IT:B TR General Description

Unleash the potential of your devices with the MT29F8G08ABABAWP-IT:B TR, a NAND flash memory chip that embodies innovation and performance. Micron Technology's expertise shines through in this chip, offering a generous 8 gigabytes of storage capacity and a seamless parallel interface for lightning-fast data access. Whether used in consumer electronics or industrial equipment, this chip's robust features, including error correction and wide temperature tolerance, ensure optimal performance in any setting. Embrace the future of storage technology with the MT29F8G08ABABAWP-IT:B TR, where efficiency and reliability converge to elevate your user experience

Key Features

Open NAND Flash Interface (ONFI) 1.0-compliant1
Single-level cell (SLC) technology
Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks
Asynchronous I/O performance
– tRC/tWC: 20ns (3.3V), 25ns (1.8V)
Array performance
– Read page: 25µs 3
– Program page: 200µs (TYP: 1.8V, 3.3V)3
– Erase block: 700µs (TYP)
Command set: ONFI NAND Flash Protocol
Advanced command set
– Program page cache mode4
– Read page cache mode 4
– One-time programmable (OTP) mode
– Two-plane commands 4
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
Operation status byte provides software method for detecting
– Operation completion
– Pass/fail condition
– Write-protect status
Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
WP# signal: Write protect entire device
First block (block address 00h) is valid when ship ped from factory with ECC. For minimum required ECC, see Error Management.
Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
RESET (FFh) required as first command after power-on
Alternate method of device initialization (Nand_In it) after power up (contact factory)
Internal data move operations supported within the plane from which data is read
Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
Operating voltage range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA

Specifications

Programmabe	Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	8Gbit	Memory Organization	1G x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	-	Access Time	-
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount