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See Technical Specifications

MT29F8G16ADADAH4-IT:D +BOM

NAND Flash, SLC NAND Flash, 8Gb, 3.3V, 63-ball VFBGA, RoHS

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

MT29F8G16ADADAH4-IT:D
Datasheet:

MT29F8G16ADADAH4-IT:D Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Models:

Request Free CAD Models for MT29F8G16ADADAH4-IT:D

MT29F8G16ADADAH4-IT:D General Description

As a RoHS-compliant product, the MT29F8G16ADADAH4-IT:D meets strict environmental standards, making it a sustainable choice for environmentally-conscious consumers. Its compact design and high-speed performance make it suitable for a variety of industrial, automotive, and consumer electronics applications

Key Features

Open NAND Flash Interface (ONFI) 1.0-compliant1
Single-level cell (SLC) technology
Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks
Asynchronous I/O performance
– tRC/tWC: 20ns (3.3V), 25ns (1.8V)
Array performance
– Read page: 25µs 3
– Program page: 200µs (TYP: 1.8V, 3.3V)3
– Erase block: 700µs (TYP)
Command set: ONFI NAND Flash Protocol
Advanced command set
– Program page cache mode4
– Read page cache mode 4
– One-time programmable (OTP) mode
– Two-plane commands 4
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
Operation status byte provides software method for detecting
– Operation completion
– Pass/fail condition
– Write-protect status
Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
WP# signal: Write protect entire device
First block (block address 00h) is valid when ship ped from factory with ECC. For minimum required ECC, see Error Management.
Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
RESET (FFh) required as first command after power-on
Alternate method of device initialization (Nand_In it) after power up (contact factory)
Internal data move operations supported within the plane from which data is read
Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
Operating voltage range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	8Gbit	Memory Organization	512M x 16
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	-	Access Time	-
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount