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See Technical Specifications

MT47H64M16HR-3IT:H +BOM

ROHS-compliant, PBGA84 package for reliable use

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

MT47H64M16HR-3IT:H
Datasheet:

MT47H64M16HR-3IT:H Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

DRAM
Technology:

SDRAM - DDR2

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

MT47H64M16HR-3IT:H General Description

The MT47H64M16HR-3 IT:H memory chip from Micron Technology is a reliable and high-performance option for industrial applications. With a capacity of 1GB, this DDR3 SDRAM chip operates at 1.5V and offers a speed of 800MHz. Its compact size makes it versatile for use in various electronic devices, providing efficient and effective memory solutions for a range of needs

Key Features

VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1 tCK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
Automotive temperature (AT) option
RoHS-compliant
Supports JEDEC clock jitter specification

Specifications

Programmabe	Not Verified	Memory Type	Volatile
Memory Format	DRAM	Technology	SDRAM - DDR2
Memory Size	1Gbit	Memory Organization	64M x 16
Memory Interface	Parallel	Clock Frequency	333 MHz
Write Cycle Time - Word, Page	15ns	Access Time	450 ps
Voltage - Supply	1.7V ~ 1.9V	Operating Temperature	-40°C ~ 95°C (TC)
Mounting Type	Surface Mount	Base Product Number	MT47H64M16