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See Technical Specifications

N25Q032A13ESE40G +BOM

Single-Level Cell (SLC)

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

N25Q032A13ESE40G
Datasheet:

N25Q032A13ESE40G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

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N25Q032A13ESE40G General Description

The N25Q032A13ESE40G flash memory device, manufactured by Micron Technology as part of the N25Q series, is renowned for its exceptional performance and reliability. With a capacity of 32 megabits organized into 4 megabytes and operating on a 1.8V power supply, this device offers high-speed read and program capabilities, ideal for non-volatile storage applications in consumer electronics, automotive systems, and industrial equipment. Its utilization of the Serial Peripheral Interface (SPI) for communication ensures efficient data transfer, while the quad-I/O interface enhances transfer rates and overall operational efficiency. Moreover, its ability to withstand industrial operating temperatures ranging from -40°C to 85°C underscores its reliability in harsh environments. With its compact size and robust features, the N25Q032A13ESE40G is a dependable solution for embedded systems requiring high-density storage with minimal power consumption

Key Features

The memory is organized as 64 (64KB) main sectors that are further divided into 16 sub sectors each (1024 subsectors in total). The memory can be erased one 4KB subsector at a time, 64KB sectors at a time, or as a whole.
The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command. The device also has the ability to pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.51	Clock Frequency-Max (fCLK)	108 MHz
Data Retention Time-Min	20	Endurance	100000 Write/Erase Cycles
JESD-30 Code	S-PDSO-G8	Length	5.285 mm
Memory Density	33554432 bit	Memory IC Type	FLASH
Memory Width	8	Number of Functions	1
Number of Terminals	8	Number of Words	4194304 words
Number of Words Code	4000000	Operating Mode	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	4MX8	Parallel/Serial	SERIAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Programming Voltage	2.7 V
Qualification Status	Not Qualified	Seated Height-Max	2.16 mm
Serial Bus Type	SPI	Standby Current-Max	0.0001 A
Supply Current-Max	0.02 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	2.7 V	Supply Voltage-Nom (Vsup)	3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	GULL WING
Terminal Pitch	1.27 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Type	NOR TYPE
Width	5.285 mm	Write Protection	HARDWARE/SOFTWARE