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See Technical Specifications

NSVR05F40NXT5G +BOM

500 mA, 40 V, Schottky Barrier Diode

Manufacturer:

onsemi
Mfr.Part #:

NSVR05F40NXT5G
Datasheet:

NSVR05F40NXT5G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99

NSVR05F40NXT5G General Description

Optimize your designs with our NSVR05F40NXT5G Schottky diode, engineered for low forward voltage drop and minimal leakage current. In a Chip Scale Package (CSP), this device minimizes board space while delivering high efficiency in compact applications

Key Features

Compact Low Inductance
Fast Switching Times
Low Temperature Drift
Rapid Current Sinking
Safe Operating Area
Ultra-High Speed Response

Application

Stylish addition to your accessories
Long-lasting battery life
Lightweight and portable

Specifications

Source Content uid	NSVR05F40NXT5G	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.10.00.70
Factory Lead Time	61 Weeks	Additional Feature	LOW LEAKAGE CURRENT
Application	EFFICIENCY	Breakdown Voltage-Min	40 V
Configuration	SINGLE	Diode Element Material	SILICON
Diode Type	RECTIFIER DIODE	Forward Voltage-Max (VF)	0.46 V
JESD-30 Code	R-PBCC-N2	JESD-609 Code	e4
Moisture Sensitivity Level	1	Non-rep Pk Forward Current-Max	10 A
Number of Elements	1	Number of Phases	1
Number of Terminals	2	Operating Temperature-Max	150 °C
Operating Temperature-Min	-40 °C	Output Current-Max	0.5 A
Peak Reflow Temperature (Cel)	260	Power Dissipation-Max	0.521 W
Reference Standard	AEC-Q101	Rep Pk Reverse Voltage-Max	40 V
Reverse Current-Max	75 µA	Reverse Test Voltage	40 V
Surface Mount	YES	Technology	SCHOTTKY
Terminal Finish	NICKEL GOLD	Terminal Form	NO LEAD
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	30