Payment Method
NX6351GP31-AZ +BOM
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application
-
Manufacturer:
-
Mfr.Part #:
NX6351GP31-AZ
-
Datasheet:
-
Product Type:
Send all BOMs to [email protected], or fill out the form below for a quote on NX6351GP31-AZ. Guaranteed response within 12hr.
Availability: 5236 PCS
Please fill in the short form below and we will provide you the quotation immediately.
NX6351GP31-AZ General Description
The NX6351GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Key Features
- Optical output power: PO = 8.5 mW
- Low threshold current: Ith = 7 mA
- Differential efficiency: ηd = 0.35 W/A
- Wide operating temperature range: TC = −40 to +85°C
- InGaAs monitor PIN-PD
- CAN package: φ 5.6 mm
- Focal point: 10.2 mm
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
In Stock: 5,236
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
Featured Products
Top Sellers
-
NX8349TS-AZ
RENESAS
310 nm AlGaInAs MQW-DFB Laser Diode for 10 Gb/s Application
-
NX6350EP33-AZ
RENESAS
270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application
-
NX6350EP31-AZ
RENESAS
270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application
-
NX6350EP27-AZ
RENESAS
270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application
-
NX6352GP29-AZ
RENESAS
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application