Payment Method
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application
Manufacturer:
Mfr.Part #:
NX8350TS33-AZ
Datasheet:
Product Type:
Send all BOMs to
[email protected],
or fill out the form below for a quote on NX8350TS33-AZ. Guaranteed response within
12hr.
Please fill in the short form below and we will provide you the quotation immediately.
The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSAs (transmitter optical subassembly) with InGaAs monitor PIN-PD in an LC receptacle type package designed for CFP transceiver.
After-Sales & Settlement Related
Payment Method
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
NX8349TS-AZ
RENESAS
310 nm AlGaInAs MQW-DFB Laser Diode for 10 Gb/s Application
NX6350EP33-AZ
RENESAS
270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application
NX6350EP31-AZ
RENESAS
270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application
NX6350EP27-AZ
RENESAS
270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application
NX6352GP29-AZ
RENESAS
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application