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See Technical Specifications

PM200CSD060 +BOM

High-Power IGBT Transistor Module

Manufacturer:

Mitsubishi Electronics
Mfr.Part #:

PM200CSD060
Datasheet:

PM200CSD060 Datasheet (PDF)
Product:

IGBT Silicon Modules
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
Collector-Emitter Saturation Voltage:

1.7 V
EDA/CAD Models:

Request Free CAD Models for PM200CSD060

PM200CSD060 General Description

Designed as part of the Intellimod™ Module series, the PM200CSD060 is the epitome of efficiency and performance. Its insulated metal substrate (IMS) technology sets it apart, delivering exceptional thermal performance and reliability. With the ability to efficiently dissipate heat, the risk of thermal runaway is minimized, leading to improved overall system efficiency and longevity

Specifications

Product Category:	IGBT Modules	Product:	IGBT Silicon Modules
Configuration:	Single	Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.7 V	Continuous Collector Current at 25 C:	200 A
Pd - Power Dissipation:	595 W	Minimum Operating Temperature:	- 20 C
Maximum Operating Temperature:	+ 150 C	Packaging:	Bulk
Mounting Style:	PCB Mount	Product Type:	IGBT Modules
Series:	PM200	Factory Pack Quantity:	10
Subcategory:	IGBTs	Technology:	Si