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See Technical Specifications

PMEG6010ELR +BOM

NXP Semiconductors

Manufacturer:

NXP/NEX
Mfr.Part #:

PMEG6010ELR
Datasheet:

PMEG6010ELR Datasheet (PDF)
Part Life Cycle Code:

Transferred
ECCN Code:

EAR99
Configuration:

SINGLE
Diode Element Material:

SILICON
EDA/CAD Models:

Request Free CAD Models for PMEG6010ELR

PMEG6010ELR General Description

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.

Key Features

Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 60 V
Extremely low leakage current
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
High temperature Tj ≤ 175 °C

Application

Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection

Specifications

Source Content uid	PMEG6010ELR	Part Life Cycle Code	Transferred
Reach Compliance Code		ECCN Code	EAR99
Configuration	SINGLE	Diode Element Material	SILICON
Diode Type	RECTIFIER DIODE	JESD-30 Code	R-PDSO-F2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Phases	1
Number of Terminals	2	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Power Dissipation-Max	0.68 W
Reference Standard	AEC-Q101; IEC-60134	Rep Pk Reverse Voltage-Max	60 V
Reverse Recovery Time-Max	0.0045 µs	Surface Mount	YES
Technology	SCHOTTKY	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	DUAL