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See Technical Specifications

PMV27UPE +BOM

NXP Semiconductors

Manufacturer:

NXP
Mfr.Part #:

PMV27UPE
Datasheet:

PMV27UPE Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Date Of Intro:

2017-02-18
EDA/CAD Models:

Request Free CAD Models for PMV27UPE

PMV27UPE General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM

Application

LED driver
Power management
High-side loadswitch
Switching circuits

Specifications

Source Content uid	PMV27UPE	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Date Of Intro	2017-02-18	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	4.5 A
Drain-source On Resistance-Max	0.032 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Reference Standard	AEC-Q101; IEC-60134
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON