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PMZ290UNE2 +BOM

NXP Semiconductors

PMZ290UNE2 General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Trench MOSFET technology
  • Low threshold voltage
  • Very fast switching
  • ElectroStatic Discharge (ESD) protection: 2 kV HBM
  • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm

Application

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Specifications

Source Content uid PMZ290UNE2 Part Life Cycle Code Transferred
Reach Compliance Code ECCN Code EAR99

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