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See Technical Specifications

S29GL512S10TFI010 +BOM

Parallel NOR Flash Memory, 512 Mbit Density, 100 ns Initial Access Time, TSOP-56, RoHS

Manufacturer:

Spansion
Mfr.Part #:

S29GL512S10TFI010
Datasheet:

S29GL512S10TFI010 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Additional Feature:

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES
Alternate Memory Width:

1
EDA/CAD Models:

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S29GL512S10TFI010 General Description

The S29GL512S10TFI010 flash memory chip by Cypress Semiconductor is a powerhouse in storage solutions. With a spacious 512 megabit capacity and lightning-fast 100ns access time, this chip is perfect for high-demand applications. Its versatile voltage supply of 3.0-3.6V ensures compatibility with a wide range of systems, while its 32 uniform sectors of 128KBytes each offer organization and efficiency in data management. Whether you're working on embedded systems or need reliable non-volatile memory, the S29GL512S10TFI010 has you covered

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Additional Feature	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	Alternate Memory Width	1
Boot Block	BOTTOM/TOP	Command User Interface	YES
Common Flash Interface	YES	Data Polling	YES
Data Retention Time-Min	2	JESD-30 Code	R-PDSO-G56
Memory IC Type	FLASH	Memory Organization	64MX8
Memory Width	8	Moisture Sensitivity Level	3
Number of Functions	1	Number of Sectors/Size	512
Number of Terminals	56	Number of Words Code	64000000
Operating Mode	ASYNCHRONOUS	Output Characteristics	3-STATE
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	260
Ready/Busy	YES	Surface Mount	YES
Technology	CMOS	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Toggle Bit	YES
Type	NAND TYPE