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TC58BYG2S0HBAI6 +BOM

TC58BYG2S0HBAI6 - EEPROM NAND Flash Memory, 1.8V, 4Gb, 24nm SLC

TC58BYG2S0HBAI6 General Description

FLASH - NAND (SLC) Memory IC 4Gbit Parallel 25 ns 67-VFBGA (6.5x8)

Specifications

Product Category NAND Flash Mounting Style SMD/SMT
Memory Size 4 Gbit Interface Type Parallel
Organization 512 M x 8 Data Bus Width 8 bit
Supply Voltage - Min 1.7 V Supply Voltage - Max 1.95 V
Supply Current - Max 30 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Active Read Current - Max 30 mA
Maximum Clock Frequency - Memory Type NAND
Moisture Sensitive Yes Product Type NAND Flash
Factory Pack Quantity 338 Subcategory Memory & Data Storage

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