This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

TC58NVG1S3HBAI4 +BOM

256M x 8 NAND Flash Parallel 3.3V in TFBGA 63-Pin

Manufacturer:

Kioxia America, Inc.
Mfr.Part #:

TC58NVG1S3HBAI4
Datasheet:

TC58NVG1S3HBAI4 Datasheet (PDF)
Programmabe:

Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND (SLC)

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

TC58NVG1S3HBAI4 General Description

Unveiling the TC58NVG1S3HBAI4 NAND flash memory chip – a cutting-edge innovation from Toshiba that redefines storage capabilities. With an impressive 256Gb capacity and 5th generation 3D NAND technology, this chip is tailor-made for a myriad of applications, including solid-state drives, smartphones, and tablets. Its 64 layers of 3D NAND flash memory cells guarantee unrivaled reliability and endurance, making it an indispensable component for high-performance storage solutions. The support for Toggle 3.0 interface ensures rapid data transfer speeds, solidifying its position as an ideal choice for demanding storage applications. Operating at a nominal voltage of 1.8V, the TC58NVG1S3HBAI4 chip delivers high-density storage with minimal power consumption, making it an efficient and dependable solution for various devices

Key Features

Organization x8 Memory cell array 2176  128K  8 Register 2176  8 Page size 2176 bytes Block size (128K  8K) bytes

Specifications

Programmabe	Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND (SLC)
Memory Size	2Gbit	Memory Organization	256M x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	25ns	Access Time	25 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount