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See Technical Specifications

TC58NVG1S3HBAI6 +BOM

2Gbit VFBGA-67 NAND FLASH

Manufacturer:

KIOXIA HOLDINGS CORP
Mfr.Part #:

TC58NVG1S3HBAI6
Datasheet:

TC58NVG1S3HBAI6 Datasheet (PDF)
Part Life Cycle Code:

Active
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
JESD-30 Code:

R-PBGA-B67
EDA/CAD Models:

Request Free CAD Models for TC58NVG1S3HBAI6

TC58NVG1S3HBAI6 General Description

The TC58NVG1S3HBAI6, manufactured by Toshiba, is a cutting-edge NAND flash memory chip that represents the latest in 3D NAND technology. With its 64-layer vertical NAND architecture, this chip offers a capacity of 32 gigabytes, making it an ideal choice for a wide range of consumer electronic devices. Whether it's smartphones, tablets, solid-state drives, or digital cameras, this chip provides high-speed data transfer rates, reliable performance, and low power consumption, making it an indispensable component for any storage solution. Furthermore, advanced error correction and wear-leveling algorithms ensure data integrity and longevity, giving users peace of mind when it comes to their valuable information. The chip also supports various interfaces, including ONFI 3.1 and Toggle 2.0, making it versatile and easy to integrate into different systems

Key Features

Organization x8 Memory cell array 2176  128K  8 Register 2176  8 Page size 2176 bytes Block size (128K  8K) bytes

Specifications

Part Life Cycle Code	Active	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8542.32.00.51
JESD-30 Code	R-PBGA-B67	Length	8 mm
Memory Density	2147483648 bit	Memory IC Type	FLASH
Memory Width	8	Number of Functions	1
Number of Terminals	67	Number of Words	268435456 words
Number of Words Code	256000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	256MX8	Parallel/Serial	PARALLEL
Programming Voltage	3.3 V	Seated Height-Max	1 mm
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3.3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Form	BALL	Terminal Pitch	0.8 mm
Terminal Position	BOTTOM	Type	SLC NAND TYPE
Width	6.5 mm