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See Technical Specifications

TC58NYG0S3HBAI6 +BOM

Industrial temperature grade EEPROM

Manufacturer:

KIOXIA HOLDINGS CORP
Mfr.Part #:

TC58NYG0S3HBAI6
Datasheet:

TC58NYG0S3HBAI6 Datasheet (PDF)
Part Life Cycle Code:

Active
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
JESD-30 Code:

R-PBGA-B67
EDA/CAD Models:

Request Free CAD Models for TC58NYG0S3HBAI6

TC58NYG0S3HBAI6 General Description

The TC58NYG0S3HBAI6 64GB 3D NAND Flash memory module from Toshiba is the perfect storage solution for modern electronic devices. With its compact design and low power consumption, it is ideal for use in smartphones, tablets, digital cameras, and other portable devices. The 15nm process technology allows for high-density storage while maintaining fast read and write speeds, making it suitable for multimedia playback, gaming, and data storage. The SATA 6.0Gbps interface ensures seamless data transfer and compatibility with a wide range of operating systems. Additionally, its high endurance and data retention capabilities make it reliable even in harsh environments, providing peace of mind for your valuable data

Specifications

Part Life Cycle Code	Active	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8542.32.00.51
JESD-30 Code	R-PBGA-B67	Length	8 mm
Memory Density	1073741824 bit	Memory IC Type	FLASH
Memory Width	8	Number of Functions	1
Number of Terminals	67	Number of Words	134217728 words
Number of Words Code	128000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	128MX8	Parallel/Serial	PARALLEL
Programming Voltage	1.8 V	Seated Height-Max	1 mm
Supply Voltage-Max (Vsup)	1.95 V	Supply Voltage-Min (Vsup)	1.7 V
Supply Voltage-Nom (Vsup)	1.8 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Form	BALL	Terminal Pitch	0.8 mm
Terminal Position	BOTTOM	Type	SLC NAND TYPE
Width	6.5 mm