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TE28F640C3BC80 +BOM

Flash memory chip

TE28F640C3BC80 General Description

Meet the TE28F640C3BC80 flash memory chip by Intel, a cutting-edge solution for data storage needs. Boasting a 64-megabit capacity and 80 ns access time, this chip provides fast and efficient data retrieval for a wide range of applications. Its low power consumption, operating within a 3-volt power supply, ensures energy efficiency while its parallel interface facilitates seamless data transfer. The chip's durability, operating in temperatures from -40 to 85 degrees Celsius, makes it a reliable choice for demanding environments across industries

Key Features

  • This is a test product.
  • Flash memory chip features high reliability.
  • The chip operates on a 3.0-3.6V power supply.

Application

  • Robust and durable
  • Streamlined data access
  • Optimal system performance

Specifications

ECCN (US) 3A991.b.1.a Part Status Obsolete
HTS 8542.32.00.71 SVHC Yes
Automotive No PPAP No
Cell Type NOR Chip Density (bit) 64M
Architecture Sectored Boot Block Yes
Block Organization Asymmetrical Location of Boot Block Bottom
Address Bus Width (bit) 22 Sector Size 8Kbyte x 8|64Kbyte x 127
Number of Bits/Word (bit) 16 Number of Words 4M
Programmability Yes Timing Type Asynchronous
Max. Access Time (ns) 80 Maximum Erase Time (s) 5/Main Block
Maximum Programming Time (ms) 0.2/Word OE Access Time (ns) 20
Interface Type Parallel Minimum Operating Supply Voltage (V) 2.7
Typical Operating Supply Voltage (V) 3|3.3 Maximum Operating Supply Voltage (V) 3.6
Programming Voltage (V) 1.65 to 3.6|11.4 to 12.6 Operating Current (mA) 18
Program Current (mA) 55 Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85 Supplier Temperature Grade Extended
Command Compatible Yes ECC Support No
Support of Page Mode No Minimum Endurance (Cycles) 100000
Mounting Surface Mount PCB changed 48
Pin Count 48 Lead Shape Gull-wing

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