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See Technical Specifications

U6264BDC07LLG1 +BOM

8K x 8 SRAM ZMD 5V Asynchronous

Manufacturer:

Alliance Memory, Inc.
Mfr.Part #:

U6264BDC07LLG1
Datasheet:

U6264BDC07LLG1 Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM
Technology:

SRAM - Asynchronous
EDA/CAD Models:

Request Free CAD Models for U6264BDC07LLG1

Email: [email protected]

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Tel: +852 95804164

U6264BDC07LLG1 General Description

Renesas Electronics has integrated advanced technology into the U6264BDC07LLG1, resulting in a high-performance SRAM chip with a 10-year data retention time. This ensures that stored data remains intact even when the power is disconnected, providing reliability for long-term usage. Additionally, the chip's 28-pin SOIC package allows for easy integration into a wide range of electronic systems, making it a versatile solution for various design requirements

Key Features

❐ 8192 x 8 bit static CMOS RAM
❐ 70 and 100 ns Access Times
❐ Common data inputs and
outputs
❐ Three-state outputs
❐ Typ. operating supply current
70 ns: 45 mA
100 ns: 37 mA
❐ Data retention current
at 3 V: <10 µA (standard)
❐ Standby current standard <30 µA
❐ Standby current low power
(L) <10 µA
❐ Standby current very low power
(LL) <1 µA
❐ Standby current for LL-version
at 25 °C and 5 V: typ. 50 nA
❐ TTL/CMOS-compatible
❐ Automatic reduction of power
dissipation in long Read or Write
cycles
❐ Power supply voltage 5 V
❐ Operating temperature ranges:
0 to 70 °C
-25 to 85 °C
-40 to 85 °C
❐ Quality assessment according to
CECC 90000, CECC 90100 and
CECC 90111

Specifications

Programmabe	Not Verified	Memory Type	Volatile
Memory Format	SRAM	Technology	SRAM - Asynchronous
Memory Size	64Kbit	Memory Organization	8K x 8
Memory Interface	Parallel	Write Cycle Time - Word, Page	70ns
Access Time	70 ns	Voltage - Supply	4.5V ~ 5.5V
Operating Temperature	0°C ~ 70°C (TA)	Mounting Type	Through Hole
Base Product Number	U6264