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See Technical Specifications

UCC27714DR +BOM

4A Half Bridge MOSFET driver, PDSO14

Manufacturer:

Texas Instruments
Mfr.Part #:

UCC27714DR
Datasheet:

UCC27714DR Datasheet (PDF)
Bus Voltage (max) (V):

600
Power Switch:

IGBT, MOSFET
Input VCC (min) (V):

10
Input VCC (max) (V):

18
EDA/CAD Models:

Request Free CAD Models for UCC27714DR

UCC27714DR General Description

With its robust features and compact design, the UCC27714DR gate driver stands out as a reliable and efficient solution for driving power MOSFETs and IGBTs. This high-speed, high-voltage half-bridge gate driver offers a peak output current of 4A and can operate at voltages up to 650V, meeting the needs of demanding applications such as power supplies, inverters, and motor drives. Its shoot-through protection circuit prevents damaging current spikes, while the adaptive dead-time control optimizes efficiency and reduces power dissipation. The added flexibility of adjusting the dead-time delay allows for customized system design, making the UCC27714DR a versatile and adaptable choice for various projects

Key Features

Compact Size
High Current Handling
Low Voltage Operation

Application

High efficiency solution
Reliable performance
Low standby power

Specifications

Bus voltage (max) (V)	600	Power switch	IGBT, MOSFET
Input VCC (min) (V)	10	Input VCC (max) (V)	18
Peak output current (A)	4	Operating temperature range (°C)	-40 to 125
Undervoltage lockout (typ) (V)	10	Rating	Catalog
Propagation delay time (µs)	0.09	Rise time (ns)	15
Fall time (ns)	15	Iq (mA)	0.3
Input threshold	CMOS, TTL	Channel input logic	Noninverting
Negative voltage handling at HS pin (V)	-8	Driver configuration	CMOS compatible, Dual, Noninverting, TTL compatible