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VCR2N +BOM
French Electronic Distributor since 1988
TO-18-3-
Manufacturer:
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Mfr.Part #:
VCR2N
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Configuration:
Single
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EDA/CAD Models:
Availability: 8207 PCS
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VCR2N General Description
The VCR2N JFET offers a current rating of 10mA and a gate-source breakdown voltage of -25V. With a gate-source cutoff voltage of -7V, this component is not compatible with leaded processes. Its Through Hole mounting type and on-resistance of 60ohm make it suitable for a variety of applications. Packaged in a TO-206AA case, please be aware that this product is not RoHS compliant
Application
AMPLIFIERSpecifications
Product Category | JFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Configuration | Single | Vds - Drain-Source Breakdown Voltage | 10 V |
Vgs - Gate-Source Breakdown Voltage | 15 V | Gate-Source Cutoff Voltage | 3.5 V |
Rds On - Drain-Source Resistance | 60 Ohms | Pd - Power Dissipation | 300 mW |
Series | VCR2N | Product Type | JFETs |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Type | JFET | Unit Weight | 0.114876 oz |
Service Policies and Others
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 8,207
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for VCR2N, guaranteed quotes back within 12hr.
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