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See Technical Specifications

W25M512JVFIQ +BOM

12Mbit Serial Flash Memory featuring Multi-Chip Package operation, uniform 4KB sectors and Dual/Quad Serial Peripheral Interface

Manufacturer:

WINBOND ELECTRONICS CORP
Mfr.Part #:

W25M512JVFIQ
Datasheet:

W25M512JVFIQ Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for W25M512JVFIQ

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

W25M512JVFIQ General Description

Embracing the ethos of security, the W25M512JVFIQ emerges as a bastion of trust, offering advanced features such as a unique device ID for authentication and secure boot capabilities. Tailored for a myriad of applications spanning automotive, industrial, networking, and consumer electronics domains, this chip transcends mere functionality to become an indispensable cornerstone of modern technology

Key Features

New Family of SpiFlash Memories
– W25M02GV: 2x1G-bit / 2x128M-byte
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– Compatible SPI serial flash commands
Highest Performance Serial NAND Flash
– 104MHz Standard/Dual/Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 50MB/S continuous data transfer rate
– Fast Program/Erase performance
– More than 100,000 erase/program cycles
– More than 10-year data retention
Efficient “Continuous Read Mode”(1)
– Alternative method to the Buffer Read Mode
– No need to issue “Page Data Read” between
Read commands
– Allows direct read access to the entire array
Flexible “Concurrent Operations”
– Independent single die access
– Allows “Read while Program/Erase”
– Allows “Multi Die Program/Erase”
– Improves Program/Erase throughput
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 25mA active, 20µA standby current
– -40°C to +85°C operating range
Flexible Architecture with 128KB blocks
– Uniform 128K-Byte Block Erase
– Flexible page data load methods
Advanced Features
– On chip 1-Bit ECC for memory array
– ECC status bits indicate ECC results
– bad block management and LUT(2) access
– Software and Hardware Write-Protect
– Power Supply Lock-Down and OTP protection
– 2KB Unique ID and 2KB parameter pages
– Ten 2KB OTP pages(3)
Space Efficient Packaging
– 8-pad WSON 8x6-mm
– 24-ball TFBGA 8x6-mm
– Contact Winbond for other package options

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.51	Alternate Memory Width	1
Clock Frequency-Max (fCLK)	104 MHz	JESD-30 Code	R-PDSO-G16
Length	10.31 mm	Memory Density	536870912 bit
Memory IC Type	FLASH	Memory Width	8
Number of Functions	1	Number of Terminals	16
Number of Words	67108864 words	Number of Words Code	64000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	64MX8
Parallel/Serial	SERIAL	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Programming Voltage	3 V	Seated Height-Max	2.64 mm
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	GULL WING
Terminal Pitch	1.27 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Type	NOR TYPE
Width	7.49 mm