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See Technical Specifications

W25N512GVEIG +BOM

12Mb Serial NAND Flash Memory with default buffer read mode and consistent 2KB+64B page size

Manufacturer:

Winbond Electronics
Mfr.Part #:

W25N512GVEIG
Datasheet:

W25N512GVEIG Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
EDA/CAD Models:

Request Free CAD Models for W25N512GVEIG

Email: [email protected]

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Tel: +852 95804164

W25N512GVEIG General Description

The W25N512GVEIG by Winbond Electronics Corporation stands out as a top-tier 512Gb NAND flash memory chip, specifically tailored for cutting-edge applications across various industries. With a 3V supply voltage and support for both SLC and MLC flash memory technology, this chip strikes the perfect balance between high performance and cost-efficiency. Its utilization of a standard SPI interface guarantees rapid and seamless data transfers, catering to the demands of modern devices

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Clock Frequency-Max (fCLK)	166 MHz	Data Retention Time-Min	10
Endurance	100000 Write/Erase Cycles	JESD-30 Code	R-PDSO-N8
Length	8 mm	Memory Density	536870912 bit
Memory IC Type	FLASH	Memory Width	8
Number of Functions	1	Number of Terminals	8
Number of Words	67108864 words	Number of Words Code	64000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	64MX8
Parallel/Serial	SERIAL	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Programming Voltage	3.3 V	Seated Height-Max	0.8 mm
Serial Bus Type	QSPI	Standby Current-Max	0.00005 A
Supply Current-Max	0.035 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	2.7 V	Supply Voltage-Nom (Vsup)	3.3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	NO LEAD
Terminal Pitch	1.27 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Type	SLC NAND TYPE
Width	6 mm	Write Protection	HARDWARE/SOFTWARE