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See Technical Specifications

W25Q16DVSNIG +BOM

With its advanced technology and compact design, this serial flash memory chip from Winbond is ideal for embedded systems development and deploymen

Manufacturer:

Winbond Electronics
Mfr.Part #:

W25Q16DVSNIG
Datasheet:

W25Q16DVSNIG Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Models:

Request Free CAD Models for W25Q16DVSNIG

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

W25Q16DVSNIG General Description

The advanced security features of the W25Q16DVSNIG, including deep power-down mode and a lockable OTP area, provide an added layer of protection for sensitive information. Whether it's automotive, industrial, consumer electronics, or networking devices, this Serial Flash Memory is a go-to solution for applications that demand reliable non-volatile storage with top-notch performance

Key Features

Family of SpiFlash Memories
– W25Q16DV: 16M-bit / 2M-byte (2,097,152)
– 256-byte per programmable page
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
Highest Performance Serial Flash
– 104MHz Dual SPI / Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 52MB/S continuous data transfer rate
– Up to 8X that of ordinary Serial Flash
– More than 100,000 erase/program cycles
– More than 20-year data retention
Efficient “Continuous Read Mode”
– Low Instruction overhead
– Continuous Read with 8/16/32/64-Byte Wrap
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, <1µA Power-down (typ.)
– -40°C to +85°C operating range
Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4/32/64K-bytes)
– Program one to 256 bytes
– Erase/Program Suspend & Resume
Advanced Security & Identification Features
– Software and Hardware Write-Protect
– Top/Bottom, 4KB complement array protection
– Power Supply Lock-Down and OTP protection
– 64-Bit Unique ID for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Byte Security Registers with OTP locks
– Volatile & Non-volatile Status Register Bits
Space Efficient Packaging(1)
– 8-pin SOIC 150/208-mil
– 8-pad WSON 6x5-mm
– 8-pad USON 4X3mm / 4X4mm
– 8-pin PDIP 300-mil
– 16-pin SOIC 300-mil
– 24-ball TFBGA 8x6-mm (6x4/5x5 ball array)
– Contact Winbond for KGD and other options

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	16Mbit	Memory Organization	2M x 8
Memory Interface	SPI - Quad I/O	Clock Frequency	104 MHz
Write Cycle Time - Word, Page	50µs, 3ms	Access Time	-
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount