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W29N02GVSIAA +BOM

FLASH - NAND (SLC) Memory IC 2Gbit Parallel 25 ns 48-TSOP

W29N02GVSIAA General Description

The W29N02GVSIAA NAND flash memory chip, crafted by Winbond Electronics, exemplifies cutting-edge technology in data storage. As a member of the esteemed W29NxxGV series, this chip boasts a remarkable capacity of 2 gigabits, equivalent to 256 megabytes. Leveraging NAND technology, it offers a potent combination of high-density data storage and compact design – ideal for space-constrained applications. Running on a 3-volt power supply, it supports a diverse array of interface options, including the versatile SPI (Serial Peripheral Interface)

Key Features

  • · Single 5-volt write (erase and program) operations
  • · Fast page-write operations
  • - 256 bytes per page
  • - Page write (erase/program) cycle: 5 mS (typ.)
  • - Effective byte-write (erase/program) cycle time: 19.5 mS
  • - Optional software-protected data write
  • · Fast chip-erase operation: 50 mS
  • · Two 16 KB boot blocks with lockout
  • · Page write (erase/program) cycles: 50K (typ.)
  • · Read access time: 70/90/120 nS
  • · Ten-year data retention
  • · Software and hardware data protection
  • · Low power consumption
  • - Active current: 25 mA (typ.)
  • - Standby current: 20 mA (typ.)
  • ·Automaticwrite (erase/program) timing with internal VPP generation
  • · End of write (erase/program) detection
  • - Toggle bit
  • - Data polling
  • · Latched address and data
  • · All inputs and outputs directly TTL compatible
  • · JEDEC standard byte-wide pinouts
  • · Available packages: 32-pin 600 mil DIP, TSOP and PLCC

Specifications

Programmabe Not Verified Memory Type Non-Volatile
Memory Format FLASH Technology FLASH - NAND (SLC)
Memory Size 2Gbit Memory Organization 256M x 8
Memory Interface Parallel Clock Frequency -
Write Cycle Time - Word, Page 25ns Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

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