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See Technical Specifications

W29N04GVSIAA +BOM

Automotive 48-Pin TSOP SLC NAND Flash Serial 3.3V 4G-bit 512M x 8

Manufacturer:

Winbond Electronics
Mfr.Part #:

W29N04GVSIAA
Datasheet:

W29N04GVSIAA Datasheet (PDF)
Programmabe:

Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND (SLC)
EDA/CAD Models:

Request Free CAD Models for W29N04GVSIAA

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

W29N04GVSIAA General Description

Boasting a 4 gigabit (512 megabyte) capacity and a supply voltage range of 2.7V to 3.6V, Winbond's W29N04GVSIAA NAND Flash memory chip is a game-changer. With a focus on high-speed data transfer, it incorporates a serial interface and achieves a maximum clock frequency of 75MHz, setting a new standard for memory chips. Its 2K-byte page size and 128-byte spare area make it a versatile choice for applications across industries, including smartphones, tablets, networking equipment, medical devices, and automotive systems. Recognized for its reliability, low power consumption, and exceptional performance, this memory chip also integrates advanced wear-leveling algorithms to optimize the flash memory's longevity

Key Features

· Single 5-volt write (erase and program) operations
· Fast page-write operations
- 256 bytes per page
- Page write (erase/program) cycle: 5 mS (typ.)
- Effective byte-write (erase/program) cycle time: 19.5 mS
- Optional software-protected data write
· Fast chip-erase operation: 50 mS
· Two 16 KB boot blocks with lockout
· Page write (erase/program) cycles: 50K (typ.)
· Read access time: 70/90/120 nS
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
- Active current: 25 mA (typ.)
- Standby current: 20 mA (typ.)
·Automaticwrite (erase/program) timing with internal VPP generation
· End of write (erase/program) detection
- Toggle bit
- Data polling
· Latched address and data
· All inputs and outputs directly TTL compatible
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin 600 mil DIP, TSOP and PLCC

Specifications

Programmabe	Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND (SLC)
Memory Size	4Gbit	Memory Organization	512M x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	25ns	Access Time	25 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount