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See Technical Specifications

W94AD6KBHX5E +BOM

High-speed performance with minimal energy usage required

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.32
Access Mode	FOUR BANK PAGE BURST	Access Time-Max	5 ns
Additional Feature	AUTO/SELF REFRESH	Clock Frequency-Max (fCLK)	200 MHz
I/O Type	COMMON	Interleaved Burst Length	2,4,8,16
JESD-30 Code	R-PBGA-B60	Length	9 mm
Memory Density	1073741824 bit	Memory IC Type	LPDDR1 DRAM
Memory Width	16	Number of Functions	1
Number of Ports	1	Number of Terminals	60
Number of Words	67108864 words	Number of Words Code	64000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-25 °C	Organization	64MX16
Output Characteristics	3-STATE	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Power Supplies	1.8 V	Qualification Status	Not Qualified
Refresh Cycles	8192	Seated Height-Max	1.025 mm
Self Refresh	YES	Sequential Burst Length	2,4,8,16
Standby Current-Max	0.00001 A	Supply Current-Max	0.115 mA
Supply Voltage-Max (Vsup)	1.95 V	Supply Voltage-Min (Vsup)	1.7 V
Supply Voltage-Nom (Vsup)	1.8 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	OTHER
Terminal Form	BALL	Terminal Pitch	0.8 mm
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Width	8 mm