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See Technical Specifications

W9812G6KH-6 +BOM

SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II

Manufacturer:

Winbond Electronics Corporation America
Mfr.Part #:

W9812G6KH-6
Datasheet:

W9812G6KH-6 Datasheet (PDF)
Memory Type:

Volatile
Memory Format:

DRAM
Technology:

SDRAM
Memory Size:

128Mbit
EDA/CAD Models:

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W9812G6KH-6 General Description

The W9812G6KH-6 is a cutting-edge DDR2 Synchronous DRAM chip that offers impressive performance capabilities. With a data transfer rate of up to 667 Mbps, this high-speed memory solution is ideal for demanding computing tasks where speed and reliability are essential. Operating at a low voltage of 1.8V, it provides energy-efficient performance without compromising on speed or functionality. Whether you are working on complex computing projects or running intensive networking applications, the W9812G6KH-6's clock frequency of 333 MHz ensures smooth and seamless operation

Key Features

Synchronous design for improved signal integrity
Speed: 200MHz, access time: 4ns
64-bit bus width for high-performance data transfer
Operating voltage: 1.8V ±10%
Power consumption: 3.5W, typical
Fully compliant with JEDEC standard

Application

For all your computing needs
Powering your mobile devices
Designed for industrial use
Reliable in automotive settings
Perfect for medical devices
Efficient in all applications

Specifications

Category	Integrated Circuits (ICs)MemoryMemory	Series	-
Memory Type	Volatile	Memory Format	DRAM
Technology	SDRAM	Memory Size	128Mbit
Memory Organization	8M x 16	Memory Interface	Parallel
Clock Frequency	166 MHz	Write Cycle Time - Word, Page	-
Access Time	5 ns	Voltage - Supply	3V ~ 3.6V
Operating Temperature	0°C ~ 70°C (TA)	Mounting Type	Surface Mount
Base Product Number	W9812G6	Pin Count	54
Released Date	Nov 13, 2021	Last Modified Date	Mar 7, 2023 4:10 PM UTC