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W9864G6IH-6 +BOM

3.3V 54-Pin TSOP-II DRAM Chip SDRAM 64Mbit 4Mx16

W9864G6IH-6 General Description

When it comes to memory performance, the W9864G6IH-6 stands in a league of its own. This high-speed DDR SDRAM chip features a substantial capacity of 512MB and boasts a phenomenal data transfer rate of up to 166MHz. Its low-power design ensures that electronic devices can operate efficiently without compromising on performance. Whether it's for consumer appliances, aerospace systems, or data storage solutions, the W9864G6IH-6 is the ultimate choice for delivering unparalleled memory performance

Key Features

  • 3.3V± 0.3V for -5/-6 speed grades power supply
  • 2. 7V~3.6V for -7/-7S speed grades power supply
  • 1,048,576 words×4 banks ×16 bits organization
  • Self Refresh Current: Standard and Low Power
  • CAS Latency: 2 & 3
  • Burst Length: 1, 2, 4, 8 and full page
  • Sequential and Interleave Burst
  • Byte data controlled by LDQM, UDQM
  • Auto-precharge and controlled precharge
  • Burst read, single write operation
  • 4K refresh cycles/64mS
  • Interface: LVTTL
  • Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant

Specifications

Programmabe Not Verified Memory Type Volatile
Memory Format DRAM Technology SDRAM
Memory Size 64Mbit Memory Organization 4M x 16
Memory Interface Parallel Clock Frequency 166 MHz
Write Cycle Time - Word, Page - Access Time 5 ns
Voltage - Supply 3V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount

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