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X28C256P-25 +BOM

Parallel CMOS EEPROM capable of storing 32 kilobits of data

Key Features

  • Access Time: 200ns
  • Simple Byte and Page Write
  • — Single 5V Supply
  • —No External High Voltages or VPP Control
  • Circuits
  • — Self-Timed
  • —No Erase Before Write
  • —No Complex Programming Algorithms
  • —No Overerase Problem
  • Low Power CMOS:
  • —Active: 60mA
  • —Standby: 200µA
  • Software Data Protection
  • — Protects Data Against System Level Inadvertent Writes
  • High Speed Page Write Capability
  • Highly Reliable Direct Write™ Cell
  • — Endurance: 100,000 Write Cycles
  • — Data Retention: 100 Years
  • Early End of Write Detection
  • — DATA Polling
  • —Toggle Bit Polling

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code
Access Time-Max 250 ns Additional Feature PAGE WRITE
Command User Interface NO Data Polling YES
Endurance 100000 Write/Erase Cycles JESD-30 Code R-PDIP-T28
JESD-609 Code e0 Length 36.45 mm
Memory Density 262144 bit Memory IC Type EEPROM
Memory Width 8 Number of Functions 1
Number of Terminals 28 Number of Words 32768 words
Number of Words Code 32000 Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C Operating Temperature-Min
Organization 32KX8 Output Characteristics 3-STATE
Page Size 64 words Parallel/Serial PARALLEL
Programming Voltage 5 V Qualification Status Not Qualified
Seated Height-Max 4.82 mm Standby Current-Max 0.0005 A
Supply Current-Max 0.06 mA Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO Technology CMOS
Temperature Grade COMMERCIAL Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE Terminal Pitch 2.54 mm
Terminal Position DUAL Toggle Bit YES
Width 15.24 mm Write Cycle Time-Max (tWC) 10 ms

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