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See Technical Specifications

1MBI400S-120 +BOM

FUJI IGBT Module

Manufacturer:

FUJITSU
Mfr.Part #:

1MBI400S-120
Datasheet:

1MBI400S-120 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

4
ECCN Code:

EAR99
Collector Current-Max (IC):

600 A
EDA/CAD Models:

Request Free CAD Models for 1MBI400S-120

1MBI400S-120 General Description

IGBT MODULE, 1200V, 400A; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:600A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:3.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:4; Current Ic @ Vce Sat:400A; Current Ic Continuous a Max:600A; Current Temperature:25°C; External Depth:62mm; External Length / Height:35mm; External Width:108mm; Fall Time tf:300ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; No. of Transistors:1; Package / Case:M127; Power Dissipation Max:3.1kW; Power Dissipation Pd:3.1kW; Power Dissipation Pd:3.1kW; Pulsed Current Icm:1200A; Rise Time:600ns; Termination Type:Screw; Transistor Type:IGBT Module; Voltage Vces:1.2kV; Weight:0.4kg

Key Features

Low Saturation Voltage
Voltage Drive
Variety of Power Capacity Series

Specifications

Part Life Cycle Code	Obsolete	Pin Count	4
Reach Compliance Code		ECCN Code	EAR99
Collector Current-Max (IC)	600 A	Collector-Emitter Voltage-Max	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE	JESD-30 Code	R-XUFM-X4
Number of Elements	1	Number of Terminals	4
Polarity/Channel Type	N-CHANNEL	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Form	UNSPECIFIED
Terminal Position	UPPER	Transistor Element Material	SILICON