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IRF640NSPBF +BOM

IRF640NSPBF is an N-channel D2PAK MOSFET capable of handling up to 200V and 18A with a power dissipation of 150W

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Key Features

  • Low RDS(on) to minimize conduction losses
  • High current capability
  • Enhanced avalanche energy capability
  • Low input and output capacitance to reduce switching losses
  • Logic-level gate drive compatibility for easy interfacing
  • Halogen-free and RoHS compliant
  • TO-262 package for easy mounting

Application

  • Motor control device
  • Car system integration
  • Battery management

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 18 A Rds On - Drain-Source Resistance 150 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 44.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 150 W Channel Mode Enhancement
Configuration Single Fall Time 5.5 ns
Height 2.3 mm Length 6.5 mm
Product Type MOSFET Rise Time 19 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type HEXFET Power MOSFET
Typical Turn-Off Delay Time 23 ns Typical Turn-On Delay Time 10 ns
Width 6.22 mm Part # Aliases SP001554094
Unit Weight 0.011640 oz

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