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IRF640NSPBF +BOM

IRF640NSPBF is an N-channel D2PAK MOSFET capable of handling up to 200V and 18A with a power dissipation of 150W

IRF640NSPBF General Description

IRF640NSPBF is a N-Channel MOSFET from Infineon Technologies. This high-electron-mobility transistor (HEXFET) is designed for power switching applications and offers excellent performance characteristics. Its N-channel MOSFET technology allows for low gate drive requirements, making it suitable for a wide range of industrial control and automotive systems. The IRF640NSPBF is housed in a durable D2PAK package with 150W (Tc) power dissipation, making it capable of handling high currents while maintaining a compact footprint.

Key Features

  • N-Channel MOSFET technology for low gate drive requirements
  • Drain to Source Voltage (Vdss) of 200 V
  • Current - Continuous Drain (Id) @ 25°C of 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) of 10V
  • Rds On (Max) @ Id, Vgs of 150mOhm @ 11A, 10V

Application

  • Power switching in industrial control systems
  • Automotive power management applications
  • High-power audio amplifiers
  • Medical device power supplies

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 18 A Rds On - Drain-Source Resistance 150 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 44.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 150 W Channel Mode Enhancement
Configuration Single Fall Time 5.5 ns
Height 2.3 mm Length 6.5 mm
Product Type MOSFET Rise Time 19 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type HEXFET Power MOSFET
Typical Turn-Off Delay Time 23 ns Typical Turn-On Delay Time 10 ns
Width 6.22 mm Part # Aliases SP001554094
Unit Weight 0.011640 oz Package/Case TO-252-3

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