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MAT01GH +BOM

6-pin TO-78 Tube package containing a NPN Bipolar Junction Transistor with a max voltage rating of 45V

Manufacturer:

Analog Devices
Mfr.Part #:

MAT01GH
Datasheet:

MAT01GH Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

45 V
EDA/CAD Models:

Request Free CAD Models for MAT01GH

Email: [email protected]

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Tel: +852 95804164

MAT01GH General Description

The MAT01GH is a highly reliable dual NPN transistor, boasting a unique Silicon Nitride "Triple-Passivation" process that ensures exceptional stability of key parameters across varying temperatures and time periods. With an offset voltage as low as 40µV, temperature drift of just 0.15µV/°C, and h_FE matching accuracy of 0.7%, this transistor offers unmatched precision and consistency in performance

Key Features

Low V_OS (V_BE match): 40 μV typical, 100 μV maximum
Low TCV_OS: 0.5 μV/°C maximum
High h_FE: 500 minimum

Application

Voltage references
Temperature sensors
Phase locked loops

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Dual
Collector- Emitter Voltage VCEO Max	45 V	Collector- Base Voltage VCBO	45 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	800 mV
Maximum DC Collector Current	25 mA	Pd - Power Dissipation	500 mW
Gain Bandwidth Product fT	450 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 125 C	Series	MAT01
DC Collector/Base Gain hfe Min	250 at 10 uA, 15 V	Height	4.7 mm
Length	9.4 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	100	Subcategory	Transistors
Technology	Si	Width	9.4 mm
Unit Weight	0.080284 oz