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2ED2108S06FXUMA1 +BOM

Robust and reliable design ensures stable performance in harsh environments

2ED2108S06FXUMA1 General Description

Half-Bridge Gate Driver IC Non-Inverting PG-DSO-8-53

Infineon Technologies Corporation Inventory

Key Features

  • Operating voltages (VS node) upto + 650 V
  • Negative VS transient immunity of 100 V
  • Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
  • Floating channel designed for bootstrap operation
  • Maximum supply voltage of 25 V
  • Independent under voltage lockout (UVLO) for both channels
  • 200 ns propagation delay
  • Internal 540 ns dead time
  • HIN, /LIN logic input
  • Logic operational up to –11 V on VS Pin
  • Negative voltage tolerance on inputs of –5 V
  • The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
  • Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
  • 50% lower level-shift losses
  • Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin
Infineon Technologies Corporation Original Stock

Application

  • AC-DC power supplies
  • Home appliances
  • Motor control and drives
  • Power tools

Specifications

RHoS yes PBFree yes
HalogenFree yes

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In Stock: 7,109

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.424 $1.42
200+ $0.552 $110.40
500+ $0.533 $266.50
1000+ $0.523 $523.00

The prices below are for reference only.

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