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2ED21834S06JXUMA1 +BOM

Compact and robust power component for automation needs

2ED21834S06JXUMA1 General Description

Half-Bridge Gate Driver IC Non-Inverting PG-DSO-14-49

Infineon Technologies Corporation Inventory

Key Features

  • Operating voltages (VS node) upto + 650 V
  • Negative VS transient immunity of 100 V
  • Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
  • High and Low Voltage Pins Separated for Maximum Creepage and Clearance
  • Separate logic and power ground
  • Floating channel designed for bootstrap operation
  • Integrated shoot-through protection with built-in dead time (programmable deadtime)
  • Maximum supply voltage of 25 V
  • Independent under voltage lockout (UVLO) for both channels
  • 200 ns propagation delay
  • HIN, /LIN input logic
  • Logic Operational up to –11 V on VS Pin
  • Negative Voltage Tolerance On Inputs of –5 V
  • The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
  • High current gate driver - suitable for high current power device, and high frequency application
  • Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
  • 50% lower level-shift losses
  • Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin
Infineon Technologies Corporation Original Stock

Application

  • AC-DC power supplies
  • Home appliances
  • Motor control and drives
  • Power tools

Specifications

RHoS yes PBFree yes
HalogenFree yes

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2ED21834S06JXUMA1 Datasheet PDF

Preliminary Specification 2ED21834S06JXUMA1 PDF Download

2ED21834S06JXUMA1 PDF Preview

In Stock: 7,047

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