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2EDN7523FXTMA1 +BOM

Advanced gate driver technology boosts power efficiency and reliabilit

2EDN7523FXTMA1 General Description

Low-Side Gate Driver IC Inverting PG-DSO-8

Infineon Technologies Corporation Inventory

Key Features

  • 5A peak source/sink current
  • 5ns (typ.) rise/fall times
  • 8V UVLO option
  • 19 ns (typ.) propagation delay for both, for control inputs and for enable
  • robustness
  • Outputs robust against reverse current
  • 2 independent channels
  • Industry standard pin-out and packages
  • Fast Miller plateau transition
  • Precise timing
  • Fast and reliable MOSFET turn-off, independent of control IC
  • Increased GND-bounce robustness
  • Saves switching diodes
  • Option to increase drive current by truly concurrent switching of 2 channels
  • Straight-forward design up-grades
Infineon Technologies Corporation Original Stock

Application

  • DC-DC converters

Specifications

RHoS yes PBFree yes
HalogenFree yes

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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2EDN7523FXTMA1 Datasheet PDF

Preliminary Specification 2EDN7523FXTMA1 PDF Download

2EDN7523FXTMA1 PDF Preview

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