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2SA1015-GR +BOM

Bipolar Transistors - BJT

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2SA1015-GR General Description

The 2SA1015GR is a PNP silicon transistor that features high breakdown voltages and low noise characteristics. It is primarily designed for use in audio amplifier and switching applications. This transistor has a maximum collector-base voltage of 120V, a maximum collector-emitter voltage of 120V, and a peak collector current of 150mA. The 2SA1015GR has a low collector-to-emitter saturation voltage, making it ideal for use in low power applications where energy efficiency is a priority. It also has a maximum DC current gain of 100, ensuring stable and reliable operation in circuit designs.This transistor is housed in a TO-92 package, which is a widely used through-hole package that facilitates easy mounting on circuit boards. It can operate at temperatures ranging from -55°C to 150°C, making it suitable for a variety of environmental conditions.

Key Features

  • Low voltage high current small signal NPN transistor
  • High DC current gain
  • Low noise figure
  • Complementary type: 2SC1815GR
  • Available in TO-92 package
  • Maximum collector current: 150 mA

Application

  • Amplification of weak signals in audio equipment
  • Driver transistors in audio amplifiers
  • General purpose switching applications
  • Signal amplification in electronic devices
  • Sensor interfaces in electronic circuits
  • Low power voltage regulators
  • Motor control circuits
  • LED drivers
  • Voltage regulators
  • Power management circuits

Specifications

Product Category Bipolar Transistors - BJT Series 2SA1015
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si

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In Stock: 4,180

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Qty. Unit Price Ext. Price
20+ $0.020 $0.40
200+ $0.016 $3.20
600+ $0.014 $8.40
3000+ $0.012 $36.00
9000+ $0.011 $99.00
21000+ $0.010 $210.00

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