This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

2SCR586JGTLL +BOM

Bipolar Transistors - BJT NPN, TO-263AB, 80V 5A, Power Transistor

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Bipolar (BJT) Transistor NPN 80 V 5 A 200MHz 40 W Surface Mount TO-263AB

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	Automotive, AEC-Q101
Transistor Type	NPN	Current - Collector (Ic) (Max)	5 A
Voltage - Collector Emitter Breakdown (Max)	80 V	Vce Saturation (Max) @ Ib, Ic	300mV @ 100mA, 2A
Current - Collector Cutoff (Max)	1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500mA, 3V
Power - Max	40 W	Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Product Category:	Bipolar Transistors - BJT	Mounting Style:	SMD/SMT
Transistor Polarity:	NPN	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	80 V	Collector- Base Voltage VCBO:	80 V
Emitter- Base Voltage VEBO:	6 V	Collector-Emitter Saturation Voltage:	100 mV
Maximum DC Collector Current:	5 A	Pd - Power Dissipation:	40 W
Gain Bandwidth Product fT:	200 MHz	Minimum Operating Temperature:	-
Maximum Operating Temperature:	+ 150 C	Packaging:	Cut Tape
Continuous Collector Current:	5 A	DC Current Gain hFE Max:	390 at 500 mA, 3 V
Product Type:	BJTs - Bipolar Transistors	Factory Pack Quantity:	1000
Subcategory:	Transistors	Technology:	Si
Part # Aliases:	2SCR586J