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FF400R17KE4EHOSA1 +BOM

IGBT Modules MEDIUM POWER 62MM

FF400R17KE4EHOSA1 Information

General Description

IGBT Module Trench Field Stop Half Bridge 1700 V 400 A Chassis Mount Module

Infineon Technologies Corporation Inventory

Key Features

  • T
  • vj>
  • RoHS compliant
  • 4 kV AC 1 min Insulation
  • Package with CTI > 400
  • High Creepage and Clearance Distances
  • UL/CSA Certification with UL1557 E83336
  • Existing packages with higher current capability, allows to increase inverter output power with same frame size
  • Highest power density
  • Flexibility
  • Optimal electrical performance
  • Highest reliability
Infineon Technologies Corporation Original Stock

Application

  • Motor control and drives
  • Power converterand inverter forwind turbines
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules IGBT Type Trench Field Stop
Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 400 A Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 400A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 36 nF @ 25 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount
Base Product Number FF400R17 RHoS yes
PBFree yes HalogenFree no
Product Category IGBT Modules Product IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max 1.7 kV Collector-Emitter Saturation Voltage 1.95 V
Continuous Collector Current at 25 C 400 A Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation - Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Product Type IGBT Modules
Factory Pack Quantity 10 Subcategory IGBTs
Part # Aliases FF400R17KE4_E SP001500356 Unit Weight 12 oz
Package/Case BGA

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FF400R17KE4EHOSA1 Datasheet PDF

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