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FF400R17KE4EHOSA1 +BOM

IGBT Modules MEDIUM POWER 62MM

FF400R17KE4EHOSA1 General Description

IGBT Module Trench Field Stop Half Bridge 1700 V 400 A Chassis Mount Module

Infineon Technologies Corporation Inventory

Key Features

  • T
  • vj>
  • RoHS compliant
  • 4 kV AC 1 min Insulation
  • Package with CTI > 400
  • High Creepage and Clearance Distances
  • UL/CSA Certification with UL1557 E83336
  • Existing packages with higher current capability, allows to increase inverter output power with same frame size
  • Highest power density
  • Flexibility
  • Optimal electrical performance
  • Highest reliability
Infineon Technologies Corporation Original Stock

Application

  • Motor control and drives
  • Power converterand inverter forwind turbines
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series C
IGBT Type Trench Field Stop Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1700 V Current - Collector (Ic) (Max) 400 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 400A Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 36 nF @ 25 V Input Standard
NTC Thermistor No Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount Base Product Number FF400R17
RHoS yes PBFree yes
HalogenFree no Product Category IGBT Modules
Product IGBT Silicon Modules Collector- Emitter Voltage VCEO Max 1.7 kV
Collector-Emitter Saturation Voltage 1.95 V Continuous Collector Current at 25 C 400 A
Gate-Emitter Leakage Current 400 nA Pd - Power Dissipation -
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Product Type IGBT Modules Factory Pack Quantity 10
Subcategory IGBTs Part # Aliases FF400R17KE4_E SP001500356
Unit Weight 12 oz Package/Case BGA

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FF400R17KE4EHOSA1 Datasheet PDF

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